Patent attributes
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and length L satisfying W≦(π/10(μm2))/L, tunnel insulation film provided on semiconductor channel, and conductive fine particle group containing conductive fine particles provided on tunnel insulation film with surface density not less than 2.5×1011 cm−2, charge and discharge of electrons generating between conductive fine particles and semiconductor channel via tunnel insulation film, wherein following inequalities are satisfied:LWDdot≧[RTunnel/RTunnel(Tox=0.8 nm)]0.3 nm/T×exp[0.3 nm×(0.8 nm/T)×(4π(2m×3.1 eV)1/2/h)],(q/4π∈T)≦26meV,[Ddot×d4/3/(W×L1/2)]×[RTunnel/RTunnel(Tox=0.8 nm)]−2/3≧8000×21/2(μm−13/6)where Ddot represents surface density, d average diameter, T thickness, Rtunnel tunnel resistance per unit area, Rtunnel (Tox=0.8 nm) tunnel resistance, per unit area, of tunnel oxide film with thickness of 0.8 nm, h Plank's constant, q elemental charge, m effective mass, and ∈ dielectric constant.
