Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Koji Suzuki0
Date of Patent
August 11, 2009
0Patent Application Number
114110580
Date Filed
April 25, 2006
0Patent Primary Examiner
Patent abstract
On a glass substrate, an insulating protective layer comprising SiO2 film is formed, and an active layer comprising a p-Si film is formed thereon. Further, a first gat insulating film comprising an SiN film which serves as a lower layer and a second gate insulating film comprising an SiN film which serves as an upper layer are stacked thereon. The second gate insulating layer is then removed by etching with a gate electrode formed thereon acting as a mask. Thus, ions can be doped only through the first gate insulating film to the p-Si film with a low acceleration energy.
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