Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 4, 2009
Patent Application Number
10597252
Date Filed
January 21, 2005
Patent Primary Examiner
Patent abstract
A method of making a source-gated transistor is described, in which a gate (4) is provided on substrate (2) followed by gate insulator (6) and semiconductor layer (8). The layer is patterned to align the source with the gate (4) using photoresist (12) and back illumination through the substrate (2) with the gate (4) acting as a mask. The distance between source and drain may also be self-aligned using a spacer technique.
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