US Patent 7567451 Ferroelectric memory device and electronic equipment

Patent 7567451 was granted and assigned to Seiko Epson on July, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Seiko Epson

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

75674510

Date of Patent

July 28, 2009

Patent Application Number

119992400

Date Filed

December 4, 2007

Patent Primary Examiner

‌

David Lam

Patent abstract

A ferroelectric memory device, having: a first charge-transfer MISFET, connected between a first bit line and a first node; a second charge-transfer MISFET, connected between a second bit line and a second node; a first capacitance, connected to the first node; a second capacitance, connected to the second node; a first p-channel MISFET, connected between the first charge-transfer MISFET and the first node, and the gate electrode of which is connected to the second node; and a second p-channel MISFET, connected between the second charge-transfer MISFET and the second node, and the gate electrode of which is connected to the first node.