US Patent 7565827 Thin film gas sensor configuration

Patent 7565827 was granted and assigned to H2Scan Corporation on July, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7565827

Patent Inventor Names

Carlton Salter0

Robert Pendergrass0

Date of Patent

July 28, 2009

Patent Application Number

11761990

Date Filed

June 12, 2007

Patent Primary Examiner

Hezron Williams

Patent abstract

A gas sensor for sensing a gas stream constituent includes, mounted a substrate, a first gas-sensing element capable of sensing the constituent in a first concentration range, a reference element insensitive to the constituent and having electrical properties congruent with the first gas-sensing element, a heating element substantially circumscribing the first gas-sensing element and the reference element, a temperature-sensing element circumscribing the first gas-sensing element and the reference element, and a second gas-sensing element capable of sensing the constituent in a second concentration range. The first gas-sensing element and the reference element are preferably metal-gated metal-oxide semiconductor (MOS) solid-state devices. The gas sensor is particularly configured to sense hydrogen concentration in a gas stream.