US Patent 7564061 Field effect transistor and production method thereof

A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or other metallic materials. The metallic materials are selected so that in an n-channel MISFET, the work function Wg of the gate electrode and the work function Wg of the source region satisfy the relation of Wg<Ws, and in a p-channel MISFET, work functions of the gate electrode and the source region satisfy the relation of Wg>Ws.