US Patent 7560356 Fabrication method of trench capacitor
Patent 7560356 was granted and assigned to United Microelectronics Corporation on July, 2009 by the United States Patent and Trademark Office.
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A method of fabricating trench capacitors is provided. A plurality of trenches is formed in the substrate by performing a patterning process with a patterned mask layer on a substrate. A bottom electrode is formed in the substrate of the surface of the trench. A portion of the patterned mask layer is removed so as to expose a portion of the substrate at two sides of the top of the trench. A capacitor dielectric layer is formed on the substrate and the surface of the trench. A conductive layer is formed over the substrate. The conductive layer is at least filled into the trench and covers the capacitor dielectric layer. The patterned mask layer and a portion of the conductive layer are removed and the portion of the conductive layer which covers the capacitor dielectric layer is reserved as to form a top electrode.
US Patent 07560356 Fabrication method of trench capacitor US Patent 7560356 Fabrication method of trench capacitor
US Patent 07560356 Fabrication method of trench capacitor
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