Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 7, 2009
Patent Application Number
10926006
Date Filed
August 26, 2004
Patent Primary Examiner
Patent abstract
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
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