Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 7, 2009
Patent Application Number
11644887
Date Filed
December 26, 2006
Patent Primary Examiner
Patent abstract
A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
