Patent attributes
A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.
