US Patent 7556978 Piezoelectric MEMS switches and methods of making

Patent 7556978 was granted and assigned to Freescale Semiconductor on July, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Freescale Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7556978

Date of Patent

July 7, 2009

Patent Application Number

11363791

Date Filed

February 28, 2006

Patent Primary Examiner

‌

Alexander G Ghyka

Patent abstract

MEMS piezoelectric switches 100 that provide advantages of compact structure ease of fabrication in a single unit, and that are free of high temperature-induced morphological changes of the contact materials and resultant adverse effects on properties. High temperature-induced morphological changes refer to changes that occur during fabrication when metallic contacts such as radio frequency lines 125, 130 and shorting bars 150 are exposed to temperatures required to anneal a piezoelectric layer or those temperatures encountered during high temperature deposition of the piezoelectric layer, if such process is used instead.