Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasuaki Yoshida0
Date of Patent
June 30, 2009
Patent Application Number
11934174
Date Filed
November 2, 2007
Patent Primary Examiner
Patent abstract
A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of λ/4n or an odd integer multiple thereof, where λ is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.
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