Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasuaki Yoshida0
Date of Patent
June 30, 2009
0Patent Application Number
119341590
Date Filed
November 2, 2007
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.
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