Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Warren M. Farnworth0
Tongbi Jiang0
Date of Patent
June 30, 2009
0Patent Application Number
109328350
Date Filed
September 1, 2004
0Patent Primary Examiner
Patent abstract
Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough. The voids may be defined by shells of microcapsules. The voids impart the dielectric materials with reduced dielectric constants and, thus, increased electrical insulation properties.
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