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US Patent 7554173 Semiconductor device

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
75541730
Patent Inventor Names
Yoshitsugu Inaba0
Takao Mitsuhashi0
Takashi Inaguchi0
Takeshi Ohi0
Katsuhiko Fukuhara0
Naoshi Yamada0
Date of Patent
June 30, 2009
0
Patent Application Number
117221120
Date Filed
December 19, 2005
0
Patent Primary Examiner
‌
Hoai V Pham
0
Patent abstract

A semiconductor device accurately monitoring temperature of a semiconductor chip even in a noisy environment, while not requiring a highly accurate detection circuit. A PTC element is bonded onto an IGBT chip. Then, a constant current flows from a constant current source through the PTC element, and an output voltage of the PTC element is detected by a voltage monitor. When output voltage increases, a voltage applied to a gate electrode by a detection circuit is decreased. Since the PTC element is directly arranged on the IGBT chip, the temperature of the IGBT chip can be monitored with high accuracy. Further, since the change in output voltage of the PTC element per 1° C. is large, a highly accurate detection circuit is not necessary, thereby allowing accurate monitoring of the temperature of the IGBT chip even in a noisy environment.

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