Patent attributes
In one aspect of the present invention, a semiconductor device may include a plurality of fins disposed substantially parallel to each other at predetermined intervals on a semiconductor substrate, a gate electrode formed to partially sandwich therein the both side surfaces, in the longitudinal direction, of each of the plurality of fins with an insulating film interposed between the gate electrode and each of the side surfaces of each fin, and a semiconductor layer formed on each of at least some of side surfaces of the plurality of fins, wherein the semiconductor layer in a region located on an outer side surface, in the longitudinal direction, of each of two fins which are located at both ends of the line of the plurality of fins is thinner than the semiconductor layer in a region located on each of side surfaces, in the longitudinal direction and other than the outer surfaces of the two fins, of the plurality of fins.
