Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Date of Patent
June 30, 2009
0Patent Application Number
113816570
Date Filed
May 4, 2006
0Patent Primary Examiner
Patent abstract
Even if the insulated isolation structure which makes element isolation using partial and full isolation combined use technology is manufactured, the manufacturing method of a semiconductor device which can manufacture the semiconductor device with which characteristics good as a semiconductor element formed in the SOI layer where insulated isolation was made are obtained is obtained.
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