Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chun-Yao Huang0
Date of Patent
June 23, 2009
Patent Application Number
12102871
Date Filed
April 15, 2008
Patent Primary Examiner
Patent abstract
A vertical double-diffusion metal-oxide-semiconductor (VDMOS) transistor device includes a first conductive type semiconductor substrate, a gate structure formed in a first trench in the first conductive type semiconductor substrate, a first conductive type well surrounding the gate structure, a source region adjacent to the gate structure formed in the first conductive type well, a drain region surrounding the source region, and a trench isolation structure formed in a second trench between the source region and the drain region.
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