Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Adam William Saxler0
Date of Patent
June 9, 2009
0Patent Application Number
111186750
Date Filed
April 29, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group III-nitride barrier layer on the channel layer. In some embodiments, the binary Group III-nitride HEMTs include a first AIN barrier layer, a GaN channel layer and a second AIN barrier layer.
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