US Patent 7538403 PIN diode structure with zinc diffusion region

Patent 7538403 was granted and assigned to Emcore Corporation on May, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Emcore Corporation

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7538403

Date of Patent

May 26, 2009

Patent Application Number

11230959

Date Filed

September 19, 2005

Patent Primary Examiner

‌

Jack Chen

Patent abstract

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.