Patent attributes
A resistance-change-type fuse circuit has a plurality of polysilicon fuses which are made of polysilicon and causes irreversible change in resistance by flowing a current; a plurality of programming transistors which are provided corresponding to the plurality of fuses, each programming transistor switching whether to flow the current through the corresponding fuse to cause change in resistance with respect to the polysilicon fuses, a dummy fuse group including a plurality of dummy fuses having the same electrical properties as that of the polysilicon fuses, each dummy fuse having 1/n (n is an integer equal to or more than 1) times a resistance of the polysilicon fuses, a dummy transistor circuit which has at least one of dummy transistor having 1/n times a conductance of the programming transistors, a gate and a drain of the dummy transistor being connected to each other, and a current mirror circuit including the programming transistor and the dummy transistor, the current mirror circuit causing each polysilicon fuse to flow n times the current flowing through the dummy fuse group.
