Patent attributes
A semiconductor device has a silicon-on-insulator (SOI) substrate comprised of a silicon substrate, a buried insulating film disposed on the silicon substrate, and a single-crystal silicon device forming layer disposed on the buried insulating film. A bleeder resistor circuit comprises resistors each formed of the single-crystal silicon device forming layer. A MOS transistor has a thin gate oxide film disposed on the single-crystal silicon device forming layer and a gate electrode disposed on the thin gate oxide film. Electrodes are disposed over the respective resistors for fixing a resistance of the resistors, the electrodes being made of the same material as that of the gate electrode of the MOS transistor. Impurity diffusion regions are disposed under the respective resistors and in the silicon substrate for fixing the resistance of the resistors.
