Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Peder Bergman0
Alexandre Ellison0
Björn Magnusson0
Christer Hallin0
Date of Patent
May 12, 2009
0Patent Application Number
111806110
Date Filed
July 14, 2005
0Patent Primary Examiner
Patent abstract
A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.
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