Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ho-Kyung Park0
Hyun-Sang Hwang0
Man Jang0
Min-Seok Jo0
Date of Patent
May 5, 2009
0Patent Application Number
120211810
Date Filed
January 28, 2008
0Patent Primary Examiner
Patent abstract
A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
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