Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akio Machida0
Tadahiro Kono0
Toshio Fujino0
Date of Patent
April 21, 2009
0Patent Application Number
116855500
Date Filed
March 13, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
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