Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yen-Hao Shih0
Erh-Kun Lai0
Jung-Yu Hsieh0
Ming-Hsiang Hsueh0
Chi-Pin Lu0
Chia-Wei Wu0
Date of Patent
April 21, 2009
0Patent Application Number
116937160
Date Filed
March 30, 2007
0Patent Primary Examiner
Patent abstract
The present invention relates to a memory device and a method of fabricating the same. The memory device comprises a substrate, a tunnel dielectric film on the substrate, pairs of source and drain regions formed in the substrate, and a number of separate storage blocks between each pair of the source and drain regions. Each storage wire block includes a storage medium and a silicon dioxide layer. Two storage blocks are separated by an interval of at least 100 angstroms.
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