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US Patent 7514759 Piezoelectric MEMS integration with GaN technology

Patent 7514759 was granted and assigned to Hrl Laboratories, Llc on April, 2009 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
Hrl Laboratories, Llc
Hrl Laboratories, Llc
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7514759
Date of Patent
April 7, 2009
Patent Application Number
11104395
Date Filed
April 11, 2005
Patent Citations Received
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US Patent 12136983 Front end modules for Wi-Fi acoustic wave resonator RF filter circuits
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US Patent 11881831 Method of manufacture for single crystal acoustic resonator devices using micro-vias
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US Patent 11895920 Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material
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US Patent 12136906 Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
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US Patent 11671067 Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
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US Patent 11677372 Piezoelectric acoustic resonator with dielectric protective layer manufactured with piezoelectric thin film transfer process
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US Patent 11689186 5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit
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US Patent 11683021 4.5G 3.55-3.7 GHz band bulk acoustic wave resonator RF filter circuit
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...
Patent Primary Examiner
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Stephen W Smoot
Patent abstract

A process for fabricating a combined micro electromechanical/gallium nitride structure. The micro electromechanical structure comprises a piezoelectric device, such as a piezoelectric switch or a bulk acoustic wave device. According to the process, high Q compact bulk acoustic wave resonators can be built. The process is applicable to technologies such as tunable planar filter technology, amplifier technology and high speed analog-to-digital converters.

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