Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 7, 2009
Patent Application Number
11184232
Date Filed
July 19, 2005
Patent Primary Examiner
Patent abstract
The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.
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