US Patent 7511984 Phase change memory

Patent 7511984 was granted and assigned to Micron Technology on March, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

75119840

Patent Inventor Names

Jun Liu0

Date of Patent

March 31, 2009

Patent Application Number

115126850

Date Filed

August 30, 2006

Patent Primary Examiner

‌

Tuan T Nguyen

Patent abstract

A PCRAM cell has a high resistivity bottom electrode cap to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements.