Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 31, 2009
Patent Application Number
12007420
Date Filed
January 10, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device is provided which has insulating film side wall spacers having a barrier function. The semiconductor device comprises: a gate oxide film and a gate electrode formed on and above a semiconductor substrate; source/drain regions formed in the semiconductor substrate; and first laminated side wall spacers having two or more layers and formed on side walls of the gate electrode, the first laminated side wall spacers including a nitride film as a layer other than an outermost layer, the outermost layer being made of an oxide film or an oxynitride film and having a bottom surface contacting the semiconductor substrate, the gate oxide film or a side wall spacer layer other than the nitride film.
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