A method and apparatus for forming connections within a semiconductor device is disclosed. The semiconductor device incorporates a contact bridge between transistor contacts in close proximity. The contact bridge comprises a plurality of metal pillars each having a lower end in electrical contact with first and second transistor elements, respectively; one or more intermediate metal pillars disposed between and in electrical contact with an upper end of the metal pillars; and one or more separation regions of dielectric disposed below the intermediate metal pillar and between the lower ends of the first and second metal pillars.