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US Patent 7510928 Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques

Patent 7510928 was granted and assigned to Tru-Si Technologies on March, 2009 by the United States Patent and Trademark Office.

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Current Assignee
Tru-Si Technologies
Tru-Si Technologies
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7510928
Date of Patent
March 31, 2009
Patent Application Number
11418801
Date Filed
May 5, 2006
Patent Primary Examiner
‌
H. Jey Tsai
Patent abstract

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the electrode but insulated from the electrode. Capacitor dielectric (320) can be formed by anodizing tantalum while a nickel layer (314) protects an underlying copper (310) from the anodizing solution. This protection allows the tantalum layer to be made thin to obtain large capacitance. Chemical mechanical polishing of a layer (610) is made faster, and hence possibly less expensive, by first patterning the layer photolithographically to form, and/or increase in height, upward protrusions of this layer.

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