US Patent 7508050 Negative differential resistance diode and SRAM utilizing such device
Patent 7508050 was granted and assigned to Advanced Micro Devices on March, 2009 by the United States Patent and Trademark Office.
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A negative differential resistance (NDR) diode and a memory cell incorporating that NDR diode are provided. The NDR diode comprises a p-type germanium region in contact with an n-type germanium region and forming a germanium pn junction diode. A first gate electrode overlies the p-type germanium region, is electrically coupled to the n-type germanium region, and is configured for coupling to a first electrical potential. A second gate electrode overlies the n-type germanium region and is configured for coupling to a second electrical potential. A third electrode is electrically coupled to the p-type germanium region and may be coupled to the second gate electrode. A small SRAM cell uses two such NDR diodes with a single pass transistor.
US Patent 07508050 Negative differential resistance diode and SRAM utilizing such device US Patent 7508050 Negative differential resistance diode and SRAM utilizing such device
US Patent 07508050 Negative differential resistance diode and SRAM utilizing such device
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