US Patent 7502631 Monolithic silicon-based phased arrays for communications and radars

A phased-array receiver is adapted so as to be fully integrated and fabricated on a single silicon substrate. The phased-array receiver is operative to receive a 24 GHz signal and may be adapted to include 8-elements formed in a SiGe BiCMOS technology. The phased-array receiver utilizes a heterodyne topology, and the signal combining is performed at an IF of 4.8 GHz. The phase-shifting with 4 bits of resolution is realized at the LO port of the first down-conversion mixer. A ring LC VCO generates 16 different phases of the LO. An integrated 19.2 GHz frequency synthesizer locks the VCO frequency to a 75 MHz external reference. Each signal path achieves a gain of 43 dB, a noise figure of 7.4 dB, and an IIP3 of −11 dBm. The 8-path array achieves an array gain of 61 dB, a peak-to-null ratio of 20 dB, and improves the signal-to-noise ratio at the output by 9 dB.