Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshihara Eurakawa0
David L. O'Meara0
Kristen Scheer0
Masanobu Igeta0
Cory Wajda0
Date of Patent
March 10, 2009
0Patent Application Number
110932600
Date Filed
March 30, 2005
0Patent Primary Examiner
Patent abstract
The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
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