Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 24, 2009
Patent Application Number
11328827
Date Filed
January 10, 2006
Patent Primary Examiner
Patent abstract
The present invention provides a radiation-tolerant, solid-state-relay without radiation-hardened parts. In further detail, the solid-state-relay includes a non-hardened P-channel MOSFET, a low power storage of voltage gain and a feedback signal with the low power stage of voltage gain being relatively insensitive to radiation effects.
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