Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Stephen Richard Fox0
Maurice Heathcote Norcott0
Neena Garg0
Siegfried Lutz Maurer0
Dan Moy0
Devendra Kumar Sadana0
Junedong Lee0
Kenneth John Giewont0
Date of Patent
February 17, 2009
0Patent Application Number
108968120
Date Filed
July 22, 2004
0Patent Primary Examiner
Patent abstract
A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
