Patent attributes
In a dual damascene process to form a fine interconnection structure, a semiconductor manufacturing method includes: forming a first film to be etched on an insulating layer on a semiconductor substrate; forming a first mask film with an opening on the first film; forming a second film to be etched on the first mask film, burying the opening; forming a second mask film on the second film to be etched; forming an interconnection pattern in the second mask film in the upper portion of the opening; forming an interconnection pattern by etching the second film using the second mask film, forming a via pattern by etching the first film to be etched using the first mask film; and forming a via hole and an interconnection trench in the upper portion of the via hole in the insulating layer by selectively etching the insulating layer using the interconnection and via patterns.
