Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Paul S Martin0
Carrie Carter Coman0
Fred A. Kish, Jr.0
Michael R Krames0
Date of Patent
February 17, 2009
0Patent Application Number
113302090
Date Filed
January 10, 2006
0Patent Primary Examiner
Patent abstract
Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
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