US Patent 7489550 EEPROM and method of driving the same
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Patent Inventor Names
Kouji Tanaka0
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Patent abstract
An EEPROM (Electrically Erasable and Programmable Read Only Memory) has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a common gate electrode and constitute one memory cell. A program operation and an erase operation are carried out by using the first MOS transistor. A read operation is carried out by using the second MOS transistor.
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US Patent 07489550 EEPROM and method of driving the same US Patent 7489550 EEPROM and method of driving the same
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Patent Number
074895500
Patent Number
74895500
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Patent Jurisdiction
Patent Number
074895500
Date of Patent
February 10, 2009
0Patent Application Number
115243000
Date Filed
September 21, 2006
0Official Website
Patent Primary Examiner
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US Patent 07489550 EEPROM and method of driving the same
Infobox
Is a
Patent jurisdiction
Patent number
07489550
Date of patent
February 10, 2009
Patent application number
11524300
Date Filed
September 21, 2006
Patent primary examiner
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