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US Patent 7488693 Method for producing silicon oxide film

Patent 7488693 was granted and assigned to Toagosei on February, 2009 by the United States Patent and Trademark Office.

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Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Inventor Names

Satoshi Hattori0

Hiroaki Takeuchi0

Hiroshi Suzuki0

Katsuyoshi Harada0

Date of Patent

February 10, 2009

Patent Application Number

10589077

Date Filed

February 17, 2005

Patent Primary Examiner

Kevin M. Picardat

Patent abstract

[Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed.

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