Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 3, 2009
Patent Application Number
11082070
Date Filed
March 16, 2005
Patent Primary Examiner
Patent abstract
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1×1020 cm−3 at Al mole fractions up to 65% are obtained.
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