US Patent 7485900 Nitride semiconductor device and a manufacturing method therefor

Patent 7485900 was granted and assigned to Nichia on February, 2009 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Nichia

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7485900

Date of Patent

February 3, 2009

Patent Application Number

11306299

Date Filed

December 22, 2005

Patent Primary Examiner

‌

Jack Chen

Patent abstract

The present invention provides a nitride semiconductor device wherein on a substrate having a first main surface and a second main surface, a nitride semiconductor layer is formed on the first main surface and an electrode is formed on the second main surface, wherein the substrate comprises dislocation concentration regions, and on the dislocation concentration regions on the second main surface of the substrate, the electrode having at least an opening region is formed, and the edge surface of the substrate has a region roughly matching the edge surface of the electrode formed on the dislocation concentration regions. With the present invention, device separation can be stabilized and a nitride semiconductor device is provided having good ohmic contact between a nitride semiconductor layer and electrode.

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