Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 3, 2009
Patent Application Number
12016594
Date Filed
January 18, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
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