Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seiji Nakahata0
Koji Uematsu0
Ryu Hirota0
Date of Patent
February 3, 2009
0Patent Application Number
118711620
Date Filed
October 12, 2007
0Patent Primary Examiner
Patent abstract
Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
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