US Patent 7482178 Chamber stability monitoring using an integrated metrology tool

A method and apparatus for monitoring the stability of a substrate processing chamber and for adjusting the process recipe. Thickness and CD measurement data are collected before wafer processing and after wafer processing by an integrated or an in-situ metrology tool to monitor process chamber stability and to adjust the process recipe. The real time chamber stability monitoring enabled by the integrated metrology tool reduces the risk and cost of wafer mis-processing. The real time process recipe adjustment allows tightening of the process recipe. Process development cycle can also be reduced by the method and apparatus.