Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zilong Peng0
Weining Wang0
Wenshan Zhan0
Xiufeng Han0
Sufen Zhao0
Date of Patent
January 20, 2009
0Patent Application Number
105995140
Date Filed
December 1, 2004
0Patent Primary Examiner
Patent abstract
The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
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