US Patent 7479651 Semiconductor device
Patent 7479651 was granted and assigned to Panasonic on January, 2009 by the United States Patent and Trademark Office.
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A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately laminated. The second thin film is made of a semiconductor which has polarization characteristics different from those of the first thin film and a band gap larger than that of the first thin film. An interface region between an upper surface of the first thin film and a lower surface of the second thin film or an interface region between a lower surface of the first thin film and an upper surface of the second thin film, is doped with an impurity.
US Patent 07479651 Semiconductor device US Patent 7479651 Semiconductor device
US Patent 07479651 Semiconductor device
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