US Patent 7479435 Method of forming a circuit having subsurface conductors

Patent 7479435 was granted and assigned to National Semiconductor on January, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

National Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7479435

Date of Patent

January 20, 2009

Patent Application Number

11007565

Date Filed

December 8, 2004

Patent Primary Examiner

‌

Alexander G Ghyka

Patent abstract

A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.