US Patent 7476971 Via line barrier and etch stop structure

Patent 7476971 was granted and assigned to Toshiba America Electronic Components on January, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Toshiba America Electronic Components

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7476971

Date of Patent

January 13, 2009

Patent Application Number

11382924

Date Filed

May 11, 2006

Patent Primary Examiner

‌

Fernando L Toledo

Patent abstract

A semiconductor device and a method for making the semiconductor device having a barrier layer in a via hole region and a barrier layer in a via line region. The barrier layer in the via line region is initially thicker than the barrier layer in the via hole region, prior to being etched during an etching process due to varying selectivity of etching rates between the via hole region and the via line region.